JYFEL is the European distributor of JELIGHT systems. They are light & compact, easy-to-use and efficient.
High-performance and easy to operate, they can use (depending on the models) a combination of UV radiation, ozone and heat in order to gently but effectively remove organic materials on a variety of substrates such as silicon, gallium arsenide (GaAs), sapphire, metal, ceramic, quartz and glass.
Versatile, JELIGHT systems are suitable for a wide range of applications.
Customizable, it is possible to prepare a special configuration depending on your needs for cleaning, etching or polymerization applications.
All systems are complying with CE marking.
UVO-Cleaner®: the damage-free alternative
Jelight UVO-Cleaner® is made entirely of polished stainless steel and is equipped with a digital timer to control the duration of UV exposure.
In addition, for efficient and maximum cleaning, this unit is equipped with an adjustable tray for the parts to be cleaned and a high-pressure mercury vapor UV grid lamp that optimally generates atomic oxygen, ozone and short-wave UV radiation.
Finally, Jelight UVO-Cleaner® is equipped with inlets for oxygen or other gaseous media and an exhaust port for connection to the exhaust system.
The UVO method is a photo-sensitized oxidation process in which contaminant molecules of photoresists, resins, human skin oils, cleaning solvent residues, silicone oils and fluxes are excited or dissociated by the absorption of short wavelength UV rays. Atomic oxygen is generated simultaneously when molecular oxygen is dissociated at 184.9 nm and ozone at 253.7 nm. Ultraviolet radiation at 253.7 nm is absorbed by most hydrocarbons and also by ozone. The products of this excitation of contaminant molecules react with atomic oxygen to form simpler volatile molecules that desorb from the surface. Therefore, when both UV wavelengths are present, atomic oxygen is permanently generated and ozone is permanently formed and destroyed.
By placing properly cleaned samples within five millimeters of an ozone-producing UV source, such as the low-pressure mercury vapor grid lamp of the UVO-Cleaner®, nearly clean surfaces can be achieved in less than one minute. The process does not damage the sensitive peripheral structures of the MOS grid oxide.
Jelight UVO-Cleaner® Models:
*Ozone concentration and the distance between the sample and the UV source can greatly affect the cleaning rate.
Pre-cleaning of wafers (e.g. cleaning a sapphire substrate prior to the HgCdTe deposition process)
Removal of residues from a photosensitive resin or a polyimide compound surface
Modification of surfaces to obtain a better adhesion
Final cleaning before molecular bonding
Growth of stable oxide thin films (GE, Si)
Cleaning of AFM tips
Stainless steel case
Digital timer for simple and reproducible results
Stainless steel tray with optional rubber mat
Height-adjustable tray for substrates up to 2.54 cm / 25 mm in height
Automatically cleans and improves coating adhesion
Multimedia input port
Exhaust port with ozone destroyer and optional fan
All units are available with fan-extracted ozone killers, which allow the unit to be used without the need for external extraction. The ozone killer will dissociate traces of ozone from the exhaust gases, while the fan will increase the flow of exhaust gases.
Radiometers and detectors are also available to measure lamp intensities.